On the Operation Mechanism and Device Modeling of AlGaN/GaN High Electron Mobility Transistors (HEMTs)
نویسندگان
چکیده
In this work, the physical based device model of AlGaN/GaN high electron mobility transistors (HEMTs) has been established and the corresponding device operation behavior has been investigated also by using Sentaurus TCAD from Synopsys. Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN spacer have been considered and the GaN cap layer and AlN spacer are found taking important roles on the gate leakage blocking and off-state breakdown voltage enhancement. Keywords—AlGaN/GaN, HEMT, Physical mechanism, TCAD simulation
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